Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD

Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD

Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers

Silicon photonic devices for mid-infrared applications

The mid-infrared (IR) wavelength region (2–20 μm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and freespace communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform....

Mid-infrared photonic crystal waveguides in silicon.

We demonstrate the design, fabrication and characterization of mid-infrared photonic crystal waveguides on a silicon-on-insulator platform, showing guided modes in the wavelength regime between 2.9 and 3.9 µm. The characterization is performed with a proprietary intra-cavity Optical Parametric Oscillator in a free space optical setup and with a fibre coupled setup using a commercial Quantum Cas...

Mid-infrared photonic crystal cavities in silicon.

We demonstrate the design, fabrication, and characterization of silicon photonic crystal cavities realized in a silicon on insulator (SOI) platform, operating at a wavelength of 4.4 μm with a quality factor of 13,600. Cavity modes are imaged using the technique of scanning resonant scattering microscopy. To the best of our knowledge, this is the first demonstration of photonic devices fabricate...